IRFZ24A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – ADVANCED POWER MOSFET

IRFZ24A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (T_C=25°C unless otherwise specified)
Symbol
BV_DSS
∆BV/∆T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
60 -- -- V
-- 0.064 -- V/°C
2.0 -- 4.0 V
-- -- 100 _nA
-- -- -100
-- -- 10
-- -- 100 ^µA
V_GS=0V,I_D=250µA
I_D=250µA See Fig 7
V_DS=5V,I_D=250µA
V_GS=20V
V_GS=-20V
V_DS=60V
V_DS=48V,T_C=150°C
-- -- 0.07 Ω ^VGS^=10V,ID^=8.5A
(4)
-- 10.8 --
V_DS=30V,I_D=8.5A
(4)
-- 600 780
-- 210 240 _pF ^{VGS=0V,VDS=25V,f =1MHz}
See Fig 5
-- 83 95
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 13 30
-- 19 40
V_DD=30V,I_D=17A,
-- 46 100 ^{ns RG=18Ω}
See Fig 13 (4) (5)
-- 48 100
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
-- 24 32
-- 4.3 --
-- 10.8 --
V_DS=48V,V_GS=10V,
nC I_D=17A
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 17
-- 68
Integral reverse pn-diode
A
in the MOSFET
(4) -- -- 1.5 V _{TJ=25°C,IS=17A,VGS=0V}
-- 60 -- ns T_J=25°C,I_F=17A
-- 0.12 -- µC di_F/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.6mH, I_AS=17A, V_DD=25V, R_G=27µ, Starting T_J =25°C
(3) I_SD ≤ 17A, di/dt ≤ 250A/µs, V_DD ≤ BV_DSS , Starting T_J =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature