|
IRFR130A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET | |||
|
◁ |
IRFR/U130A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ÎC unless otherwise specified)
Symbol
BVDSS
âBV/ âTJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(âMillerâ) Charge
Min. Typ. Max. Units
Test Condition
100 -- -- V VGS=0V,ID=250 µA
-- 0.11 -- V/ ÎC ID=250µA See Fig 7
2.0 -- 4.0 V VDS=5V,ID=250 µ A
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
--
-- 100 µ A VDS=80V,TC=125ÎC
-- -- 0.11 ⦠VGS=10V,ID=6.5A
O4
-- 9.25 --
⦠VDS=40V,ID=6.5A
O4
-- 610 790
-- 150 175 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 62 72
-- 13 40
-- 14 40
VDD=50V,ID=14A,
-- 55 110 ns RG=12â¦
See Fig 13
-- 36 80
O4 O5
-- 27 36
-- 4.5 --
-- 12.8 --
VDS=80V,VGS=10V,
nC ID=14A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 13
-- 52
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.5 V TJ=25ÎC,IS=13A,VGS=0V
-- 109 -- ns TJ=25ÎC ,IF=14A
-- 0.41 -- µC diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=2mH, IAS=13A, VDD=25V, RG=27 â¦, Starting TJ =25 oC
O3 ISD <_ 14A, di/dt <_ 350A/µs, VDD<_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature
|
▷ |