IRF630A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

IRF630A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T_C=25^oC unless otherwise specified)
Symbol
BV_DSS
∆BV/∆T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
200 -- -- V ^VGS^=0V,ID^{=250 µA}
-- 0.21 -- V/ ^oC ^ID^{=250 µA See Fig 7}
2.0 -- 4.0 V ^VDS^=5V,ID^{=250 µA}
-- -- 100 _nA ^VGS^=30V
-- -- -100
V_GS=-30V
-- -- 10
V_DS=200V
-- -- 100 ^{µA V}DS^=160V,TC^{=125 oC}
Static Drain-Source
On-State Resistance
-- -- 0.4 Ω V_GS=10V,I_D=4.5A
O⁴
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 3.87 -- _Ω V_DS=40V,I_D=4.5A
O⁴
-- 500 650
-- 95 110 _pF ^{VGS=0V,VDS=25V,f =1MHz}
See Fig 5
-- 45 55
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 13 40
-- 13 40
V_DD=100V,I_D=9A,
-- 30 70 ^{ns RG=12 Ω}
See Fig 13
-- 18 50
O⁴ O⁵
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
-- 22 29
-- 4.3 --
-- 10.9 --
V_DS=160V,V_GS=10V,
nC
I_D=9A
See Fig 6 & Fig 12
O⁴ O⁵
Source-Drain Diode Ratings and Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O^{1 --}
O^{4 --}
--
--
-- 9
-- 36
-- 1.5
137 --
0.68 --
Integral reverse pn-diode
A
in the MOSFET
V T_J=25^oC ,I_S=9A,V_GS=0V
ns T_J=25 ^oC ,I_F=9A
µC _diF/dt=100A/ µ_s
O⁴
Notes ;
O^{1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature}
O^{2 L=3mH, I}AS^{=9A, V}DD^{=50V, R}G^{=27Ω, Starting T}J ^{=25 oC}
O^{3 I}SD ^{<_ 9A, di/dt <_ 220A/µs, V}DD ^{<_ BV}DSS ^{, Starting T}J ^{=25 oC}
O^{4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%}
O^{5 Essentially Independent of Operating Temperature}