IRF624A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

IRF624A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T_C=25 °C unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
BV_DSS
∆ BV/∆T_J
V_GS(th)
I_GSS
I_DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
250 -- -- V
-- 0.30 -- V/°C
2.0 -- 4.0 _V
-- -- 100 _nA
-- -- -100
-- -- 10
-- -- 100 ^µA
V_GS=0V,I_D=250µA
I_D=250µA See Fig 7
V_DS=5V,I_D=250µA
V_GS=30V
V_GS=-30V
V_DS=250V
V_DS=200V,T_C=125°C
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
-- -- 1.1 Ω ^VGS^=10V,ID^{=2.05A (4)}
-- 2.69 --
V_DS=40V,I_D=2.05A (4)
-- 335 430
-- 55 65 _pF ^{VGS=0V,VDS=25V,f =1MHz}
See Fig 5
-- 23 28
-- 11 30
-- 12 35
V_DD=125V,I_D=4.1A,
-- 32 75 ^{ns RG=18 Ω}
See Fig 13 (4) (5)
-- 15 40
-- 14 20
V_DS=200V,V_GS=10V,
-- 2.8 -- nC I_D=4.1A
-- 6.4 --
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
I_S
Continuous Source Current
I_SM
Pulsed-Source Current
(1)
V_SD Diode Forward Voltage
(4)
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-- -- 4.1
Integral reverse pn-diode
A
-- -- 16
in the MOSFET
-- -- 1.5 V ^TJ^=25°C,IS^=4.1A,VGS^=0V
-- 135 -- ns ^TJ^=25°C,IF^=4.1A
-- 0.65 -- µC ^diF^{/dt=100A/ µs}
(4)
Notes ;
(1) Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
(2) L=8mH, I_AS=4.1A, V_DD=50V, R_G=27Ω, Starting T_J =25°C
(3) I_SD ≤ 4.1A, di/dt ≤ 170A/µs, V_DD ≤ BV_DSS , Starting T_J =25°C
(4) Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
2