HUF75321P3 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 35A, 55V, 0.034 Ohm, N-Channel UltraFET er MOSFETs

HUF75321P3, HUF75321S3S
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T_pkg
55
55
±20
35
Figure 4
Figures 6, 14, 15
93
0.625
-55 to 175
300
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BV_DSS
I_DSS
I_GSS
I_D = 250µA, V_GS = 0V (Figure 11)
V_DS = 50V, V_GS = 0V
V_DS = 45V, V_GS = 0V, T_C = 150^oC
V_GS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
V_GS(TH)
r_DS(ON)
V_GS = V_DS, I_D = 250µA (Figure 10)
I_D = 35A, V_GS = 10V (Figure 9)
Thermal Resistance Junction to Case
R_θJC
Thermal Resistance Junction to Ambient
R_θJA
SWITCHING SPECIFICATIONS (V_GS = 10V)
Turn-On Time
t_ON
Turn-On Delay Time
t_d(ON)
Rise Time
t_r
Turn-Off Delay Time
t_d(OFF)
Fall Time
t_f
Turn-Off Time
t_OFF
GATE CHARGE SPECIFICATIONS
(Figure 3)
TO-220, TO-263
V_DD = 30V, I_D ≅ 35A,
R_L = 0.86Ω, V_GS = 10V,
R_GS = 25Ω
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Q_g(TOT)
Q_g(10)
Q_g(TH)
Q_gs
Q_gd
V_GS = 0V to 20V
V_GS = 0V to 10V
V_GS = 0V to 2V
V_DD = 30V,
I_D ≅ 35A,
R_L = 0.86Ω
I_g(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.028 0.034
Ω
-
-
1.6
o_C/W
-
-
62
o_C/W
-
-
100
ns
-
11
-
ns
-
55
-
ns
-
47
-
ns
-
66
-
ns
-
-
170
ns
-
36
44
nC
-
21
26
nC
-
1.3
1.6
nC
-
3
-
nC
-
9
-
nC
©2001 Fairchild Semiconductor Corporation
HUF75321P3, HUF75321S3S Rev. B