HGTG20N60B3D Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG20N60B3D
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector to Gate Voltage, R_GE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T_C = 110^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110
Average Diode Forward Current at 110^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching Safe Operating Area at T_C = 150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
HGTG20N60B3D
600
600
40
20
20
160
±20
±30
30A at 600V
165
1.32
-40 to 150
260
4
10
UNITS
V
V
A
A
A
A
V
V
W
W/^oC
o_C
o_C
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE = 360V, T_C = 125^oC, R_G = 25Ω.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BV_CES
I_CES
V_CE(SAT)
V_GE(TH)
I_GES
SSOA
I_C = 250µA, V_GE = 0V
V_CE = BV_CES
T_C = 25^oC
T_C = 150^oC
I_C = I_C110,
T_C = 25^oC
V_GE = 15V
T_C = 150^oC
I_C = 250µA, V_CE = V_GE
V_GE = ±20V
T_C = 150^oC
V_GE = 15V,
R_G = 10Ω,
L = 45µH
V_CE = 480V
V_CE = 600V
600
-
-
V
-
-
250
µA
-
-
2.0
mA
-
1.8
2.0
V
-
2.1
2.5
V
3.0
5.0
6.0
V
-
-
±100
nA
100
-
-
A
30
-
-
A
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
V_GEP
Q_G(ON)
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON
E_OFF
V_EC
t_rr
R_θJC
I_C = I_C110, V_CE = 0.5 BV_CES
I_C = I_C110,
V_CE = 0.5 BV_CES
T_C = 150^oC,
I_CE = I_C110
V_CE = 0.8 BV_CES,
V_GE = 15V
R_G = 10Ω,
L = 100µH
V_GE = 15V
V_GE = 20V
I_EC = 20A
I_EC = 20A, dI_EC/dt = 100A/µs
I_EC = 1A, dI_EC/dt = 100A/µs
IGBT
Diode
-
8.0
-
V
-
80
105
nC
-
105
135
nC
-
25
-
ns
-
20
-
ns
-
220
275
ns
-
140
175
ns
-
475
-
µJ
-
1050
-
µJ
-
1.5
1.9
V
-
-
55
ns
-
-
45
ns
-
-
0.76
o_C/W
-
-
1.2
o_C/W
NOTE:
3. Turn-Off Energy Loss (E_OFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I_CE = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B