HGT1S20N60A4S9A Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 600V, SMPS Series N-Channel IGBTs

HGT1S20N60A4S9A
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector Current Continuous
At T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T_C = 110^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching Safe Operating Area at T_J = 150^oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_PKG
HGT1S20N60A4S9A
600
70
40
280
±20
±30
100A at 600V
290
2.32
-55 to 150
300
260
UNITS
V
A
A
A
V
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications T_J = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
BV_CES
BV_ECS
I_CES
V_CE(SAT)
V_GE(TH)
I_GES
SSOA
V_GEP
Q_g(ON)
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
E_ON2
E_OFF
I_C = 250µA, V_GE = 0V
I_C = 10mA, V_GE = 0V
V_CE = 600V
T_J = 25^oC
T_J = 125^oC
I_C = 20A,
V_GE = 15V
T_J = 25^oC
T_J = 125^oC
I_C = 250µA, V_CE = 600V
V_GE = ±20V
T_J = 150^oC, R_G = 3Ω, V_GE = 15V
L = 100µH, V_CE = 600V
I_C = 20A, V_CE = 300V
I_C = 20A,
V_CE = 300V
V_GE = 15V
V_GE = 20V
IGBT and Diode at T_J = 25^oC
I_CE = 20A
V_CE = 390V
V_GE =15V
R_G = 3Ω
L = 500µH
Test Circuit (Figure 20)
MIN
TYP
MAX UNITS
600
-
-
V
15
-
-
V
-
-
250
µA
-
-
2.0
mA
-
1.8
2.7
V
-
1.6
2.0
V
4.5
5.5
7.0
V
-
-
±250
nA
100
-
-
A
-
8.6
-
V
-
142
162
nC
-
182
210
nC
-
15
-
ns
-
12
-
ns
-
73
-
ns
-
32
-
ns
-
105
-
µJ
-
280
350
µJ
-
150
200
µJ
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A