H11G1 Datasheet, PDF (2/7 Pages) Motorola, Inc – 6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)

HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1, H11G2, H11G3
ELECTRICAL CHARACTERISTICS (T_A = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Characteristic
Test Conditions Symbol Device Min
EMITTER
Forward Voltage
(I_F = 10 mA)
V_F
ALL
Forward Voltage Temp.
Coefficient
VF
TA
ALL
Reverse Breakdown Voltage
Junction Capacitance
(I_R = 10 µA) BV_R
ALL
3.0
(V_F = 0 V, f = 1 MHz)
(V_F = 1 V, f = 1 MHz)
C_J
ALL
ALL
Reverse Leakage Current
DETECTOR
(V_R = 3.0 V)
I_R
ALL
H11G1
100
Breakdown Voltage
Collector to Emitter
(I_C = 1.0 mA, I_F = 0) BV_CEO H11G2
80
H11G3
55
H11G1
100
Collector to Base
(I_C = 100 µA)
BV_CBO
H11G2
H11G3
80
55
Emitter to Base
BV_EBO
ALL
7
(V_CE = 80 V, I_F = 0)
H11G1
Leakage Current
Collector to Emitter
(V_CE = 60 V, I_F = 0)
(V_CE = 30 V, I_F = 0)
(V_CE = 80 V, I_F = 0, T_A = 80°C)
(V_CE = 60 V, I_F = 0, T_A = 80°C)
I_CEO
H11G2
H11G3
H11G1
H11G2
Typ**
Max
Unit
1.3
1.50
V
-1.8
mV/°C
25
V
50
pF
65
pF
0.001
10
µA
V
10
100
nA
100
µA
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol Device Min
Typ**
Max
Unit
EMITTER
Current Transfer Ratio
Collector to Emitter
(I_F = 10 mA, V_CE = 1 V)
(I_F = 1 mA, V_CE = 5 V)
CTR
H11G1/2 100 (1000)
H11G1/2 5 (500)
H11G3 2 (200)
mA (%)
Saturation Voltage
(I_F = 16 mA, I_C = 50 mA)
(I_F = 1 mA, I_C = 1 mA)
(I_F = 20 mA, I_C = 50 mA)
H11G1/2
V_{CE (SAT)} H11G1/2
H11G3
0.85
1.0
0.75
1.0
V
0.85
1.2
TRANSFER CHARACTERISTICS
Characteristic
Test Conditions Symbol Device Min
SWITCHING TIMES
Turn-on Time
(R_L = 100 1, I_F = 10 mA)
t_on
ALL
Turn-off Time (V_CE = 5 V) Pulse Width 6300 µs, f 630 Hz)
t_off
ALL
** All typical values at T_A = 25°C
Typ**
Max
Unit
5
µs
100
7/21/00 200045A