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| H11AG1 Datasheet, PDF (2/8 Pages) QT Optoelectronics – PHOTOTRANSISTOR OPTOCOUPLERS | |||
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
ELECTRICAL CHARACTERISTICS (TA = 0-70°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
Test Conditions
Symbol
Device
Min
EMITTER
Input Forward Voltage
IF = 1 mA
VF
All
Reverse Leakage Current
VR = 5 V, TA = 25°C
VR = 5 V, TA = 70°C
IR
IR
All
All
Capacitance
V = 0, f = 1.0 MHz
CJ
All
DETECTOR
Breakdown Voltage
Collector to Emitter
IC = 1.0 mA, IF = 0
BVCEO
All
30
Collector to Base
IC = 100 µA, IF = 0
BVCBO
All
70
Emitter to Collector
IC = 100 µA, IF = 0
BVECO
All
7
Leakage Current
Collector to Emitter
VCE = 10 V, IF = 0
ICEO
All
Capacitance
VCE = 10 V, f = 1 MHz
CCE
All
Typ
Max
Units
1.5
V
10
µA
100
µA
100
pF
V
V
V
5
10
µA
2
pF
ISOLATION CHARACTERISTICS
Parameters
Input-Output Isolation Voltage
Test Conditions
II-0 ⤠1 µA, t = 1 min.
Symbol Min
Typ
Max
Units
VISO
5300
Vac(rms)
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristics
Test Conditions
Symbol
Device
Min
Typ
Max
Units
H11AG1
300
IF = 1 mA, VCE = 5 V
CTR
H11AG2
200
H11AG3
100
H11AG1
100
Current Transfer Ratio
IF = 1 mA, VCE = 0.6 V
CTR
H11AG2
50
%
H11AG3
20
H11AG1
100
IF = 0.2 mA, VCE = 1.5 V
CTR
H11AG2
50
Saturation Voltage
AC Characteristics
Non-Saturated Switching Times
Turn-On Time
Turn-Off Time
IF = 2.0 mA, IC = 0.5 mA
Test Conditions
RL = 100 â¦, IF = 1 mA, VCC = 5 V
RL = 100 â¦, IF = 1 mA, VCC = 5 V
VCE(SAT)
Symbol
ton
toff
All
Device
All
All
.40
V
Min
Typ
Max
Units
5
µS
5
µS
www.fairchildsemi.com
2 OF 8
1/28/02 DS300213
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