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| H11AA814_06 Datasheet, PDF (2/11 Pages) Fairchild Semiconductor – 4-Pin Phototransistor Optocouplers | |||
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Absolute Maximum Ratings (TA = 25°C Unless otherwise speciï¬ed.)
Symbol
Parameter
Device*
TOTAL DEVICE
TSTG Storage Temperature
All
TOPR Operating Temperature
All
TSOL Lead Solder Temperature
All
PD
Total Device Power Dissipation (-55°C to 50°C)
All
EMITTER
IF
Continuous Forward Current
814 Series
617, 817 Series
VR
Reverse Voltage
617 Series
817 Series
PD
LED Power Dissipation (25°C ambient)
All
No derating up to 100°C
DETECTOR
VCEO
VECO
Collector-Emitter Voltage
Emitter-Collector Voltage
All
814, 817 Series
617 Series
IC
Continuous Collector Current
All
PD
Detector Power Dissipation (25°C ambient)
All
Derate above 90°C
Value
Units
-55 to +150
°C
-55 to +100
°C
260 for 10 sec
°C
200
mW
±50
mA
50
6
V
6
70
mW
70
V
6
V
7
50
mA
150
mW
2.9
mW/°C
Electrical Characteristics (TA = 25°C Unless otherwise speciï¬ed.)
Individual Component Characteristics
Symbol Parameter
Test Conditions
EMITTER
VF Input Forward Voltage IF = 60mA
IF = 20mA
IF = ±20mA
IR
Reverse Leakage
Current
VR = 6.0V
VR = 5.0V
DETECTOR
BVCEO Collector-Emitter
Breakdown Voltage
IC = 0.1 mA, IF = 0
BVECO Emitter-Collector
Breakdown Voltage
IE = 10 µA, IF = 0
ICEO
Collector-Emitter
Dark Current
VCE = 10V, IF = 0
Device
Min. Typ.* Max. Unit
617 Series
817 Series
814 Series
617 Series
817 Series
1.35 1.65 V
1.2 1.5
1.2 1.5
.001 10 µA
ALL
70 100
V
814, 817 Series
6
617 Series
7
H11AA814/A, 817 Series,
H11A617C/D
H11A617A/B
10
V
10
1
100 nA
50
*Typical values at TA=25°C
2
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
www.fairchildsemi.com
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