H11AA814 Datasheet, PDF (2/9 Pages) QT Optoelectronics – 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation (-55°C to 50 °C)
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation (25°C ambient)
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation (25°C ambient)
Derate above 25°C
Symbol
T_STG
T_OPR
T_SOL
P_D
I_F
V_R
I_F(pk)
P_D
V_CEO
V_ECO
I_C
P_D
Device
Value
Units
All
-55 to +150
°C
All
-55 to +100
°C
All
260 for 10 sec
°C
All
200
mW
All
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
50
mA
6
5
V
1.0
A
100
mW
1.33
mW/°C
All
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
70
V
6
7
V
6
50
mA
150
mW
2.0
mW/°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
Device
Min Typ* Max Unit
EMITTER
(I_F = 60 mA)
H11A617A/B/C/D
1.35 1.65
Input Forward Voltage
(I_F = 20 mA) V_F
(I_F = ±20 mA)
H11A817/A/B/C/D
H11AA814/A
1.2 1.5 V
1.2 1.5
Reverse Leakage Current
(V_R = 6.0 V)
(V_R = 5.0 V)
I_R
H11A617A/B/C/D
H11A817/A/B/C/D
.001 10 µA
DETECTOR
Collector-Emitter Breakdown
Voltage
(I_C = 1.0 mA, I_F = 0) BV_CEO
ALL
70 100
V
H11AA814/A
6
Emitter-Collector Breakdown
Voltage
(I_E = 100 µA, I_F = 0) BV_ECO
H11A617A/B/C/D
7 10
V
H11A817/A/B/C/D
6
Collector-Emitter Dark Current
(V_CE = 10V, I_F = 0)
I_CEO
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D
H11A617A/B
100
1
nA
50
Collector-Emitter Capacitance (V_CE = 0 V, f = 1 MHz) C_CE
ALL
8
pF
*Typical values at T_A = 25°C.
© 2003 Fairchild Semiconductor Corporation
Page 2 of 9
4/24/03