H11A1VM Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – General Purpose 6-Pin Phototransistor Optocouplers

Absolute Maximum Ratings (T_A = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
TOTAL DEVICE
T_STG
T_OPR
T_SOL
P_D
Storage Temperature
Operating Temperature
Wave solder temperature (see page 8 for reflow solder profile)
Total Device Power Dissipation @ T_A = 25°C
Derate above 25°C
EMITTER
I_F
V_R
I_F(pk)
P_D
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ T_A = 25°C
Derate above 25°C
DETECTOR
V_CEO
V_CBO
V_ECO
P_D
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ T_A = 25°C
Derate above 25°C
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
60
6
3
120
1.41
30
70
7
150
1.76
Units
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
Electrical Characteristics (T_A = 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
EMITTER
V_F
I_R
DETECTOR
BV_CEO
BV_CBO
BV_ECO
I_CEO
I_CBO
C_CE
Input Forward Voltage
Reverse Leakage Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
I_F = 10mA
V_R = 6.0V
I_C = 1.0mA, I_F = 0
I_C = 100µA, I_F = 0
I_E = 100µA, I_F = 0
V_CE = 10V, I_F = 0
V_CB = 10V
V_CE = 0V, f = 1 MHz
Min. Typ.* Max. Unit
1.18 1.50
V
0.001 10
µA
30
100
V
70
120
V
7
10
V
1
50
nA
20
nA
8
pF
Isolation Characteristics
Symbol Characteristic
V_ISO
R_ISO
C_ISO
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
*Typical values at T_A = 25°C
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
Test Conditions
f = 60Hz, t = 1 sec
V_I-O = 500 VDC
V_I-O = &, f = 1MHz
Min. Typ.* Max.
7500
10¹¹
0.2
2
Units
Vac(pk)
Ω
pF
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