FSB50660SF Datasheet, PDF (2/11 Pages) Fairchild Semiconductor – Motion SPMR 5 SuperFETR Series

Absolute Maximum Ratings
Inverter Part (each MOSFET unless otherwise specified.)
Symbol
Parameter
Conditions
V_DSS
*I_{D 25}
*I_{D 80}
*I_DP
*I_DRMS
*P_D
Drain-Source Voltage of Each MOSFET
Each MOSFET Drain Current, Continuous T_C = 25°C
Each MOSFET Drain Current, Continuous T_C = 80°C
Each MOSFET Drain Current, Peak
T_C = 25°C, PW < 100 s
Each MOSFET Drain Current, Rms
T_C = 80°C, F_PWM < 20 kHz
Maximum Power Dissipation
T_C = 25°C, For Each MOSFET
Rating
600
3.1
2.3
8.1
1.6
14.2
Control Part (each HVIC unless otherwise specified.)
Symbol
Parameter
Conditions
V_CC
Control Supply Voltage
V_BS
High-side Bias Voltage
V_IN
Input Signal Voltage
Applied Between V_CC and COM
Applied Between V_B and V_S
Applied Between IN and COM
Rating
20
20
-0.3 ~ V_CC + 0.3
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
Symbol
Parameter
Conditions
V_RRMB Maximum Repetitive Reverse Voltage
* I_FB
* I_FPB
Forward Current
Forward Current (Peak)
T_C = 25°C
T_C = 25°C, Under 1ms Pulse Width
Rating
600
0.5
1.5
Thermal Resistance
Symbol
Parameter
R_JC
Junction to Case Thermal Resistance
Conditions
Each MOSFET under Inverter Oper-
ating Condition (1st Note 1)
Rating
8.8
Total System
Symbol
Parameter
T_J
T_STG
Operating Junction Temperature
Storage Temperature
V_ISO
Isolation Voltage
Conditions
60 Hz, Sinusoidal, 1 Minute, Con-
nect Pins to Heat Sink Plate
Rating
-40 ~ 150
-40 ~ 125
1500
1st Notes:
1. For the measurement point of case temperature T_C, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
Unit
V
A
A
A
A_rms
W
Unit
V
V
V
Unit
V
A
A
Unit
°C/W
Unit
°C
°C
V_rms
©2012 Fairchild Semiconductor Corporation
2
FSB50660SF, FSB50660SFT Rev. C6
www.fairchildsemi.com