FQU13N06TU Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 60 V, 10 A, 140 m

Package Marking and Ordering Information
Part Number
FQD13N06TM
Top Mark
FQD13N06
Package
DPAK
Packing Method Reel Size
Tape and Reel 330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics
Symbol
Parameter
T_C = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
∆BV_{DSS Breakdown Voltage Temperature}
/ ∆T_J Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSSF
I_GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA, Referenced to
25°C
V_DS = 60 V, V_GS = 0 V
V_DS = 48 V, T_C = 125°C
V_GS = 25 V, V_DS = 0 V
V_GS = -25 V, V_DS = 0 V
60
--
-- 0.06
--
--
--
--
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V_GS(th) Gate Threshold Voltage
R_DS(on) Static Drain-Source On-Resistance
g_FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 5.0 A
V_DS = 25 V, I_D = 5.0 A
2.0 --
4.0
V
-- 0.11 0.14
Ω
-- 4.9
--
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
-- 240 310
pF
--
90
120
pF
--
15
20
pF
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 30 V, I_D = 6.5 A,
R_G = 25 Ω
--
5
20
ns
--
25
60
ns
--
8
25
ns
(Note 4) --
15
40
ns
V_DS = 48 V, I_D = 13 A,
-- 5.8
7.5
nC
V_GS = 10 V
-- 2.0
--
nC
(Note 4) --
2.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 10 A
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 13 A,
dI_F / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 990 µH, IAS = 10 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ^ISD ^{≤ 13 A, di/dt ≤ 300 A/us, V}DD ^{≤ BV}DSS, ^{starting T}J ^{= 25°C.}
4. Essentially independent of operating temperature.
--
--
10
A
--
--
40
A
--
--
1.5
V
--
39
--
ns
--
40
--
nC
©2000 Fairchild Semiconductor Corporation
2
FQD13N06 Rev. C1
www.fairchildsemi.com