FQU10N20CTU Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

Package Marking and Ordering Information
Device Marking
FQD10N20C
FQU10N20C
Device
FQD10N20CTM
FQU10N20CTU
Package
D-PAK
I-PAK
Reel Size
330 mm
Tube
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics T_C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 μA
200
ΔBV_{DSS Breakdown Voltage Temperature}
/ ΔT_J Coefficient
I_D = 250 μA, Referenced to 25°C
--
I_DSS
Zero Gate Voltage Drain Current
V_DS = 200 V, V_GS = 0 V
V_DS = 160 V, T_C = 125°C
--
--
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 30 V, V_DS = 0 V
--
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -30 V, V_DS = 0 V
--
On Characteristics
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 μA
2.0
R_DS(on)
Static Drain-Source
On-Resistance
V_GS = 10 V, I_D = 3.9 A
--
g_FS
Forward Transconductance
V_DS = 40 V, I_D = 3.9 A
--
Dynamic Characteristics
C_iss
C_oss
Input Capacitance
Output Capacitance
V_DS = 25 V, V_GS = 0 V,
--
f = 1.0 MHz
--
C_rss
Reverse Transfer Capacitance
--
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 100 V, I_D = 9.5 A,
R_G = 25 Ω
V_DS = 160 V, I_D = 9.5 A,
V_GS = 10 V
--
--
--
(Note 4)
--
--
--
(Note 4)
--
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
--
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
--
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 7.8 A
--
t_rr
Reverse Recovery Time
V_GS = 0 V, I_S = 9.5 A,
--
Q_rr
Reverse Recovery Charge
dI_F / dt = 100 A/μs
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 5.2 mH, I_AS = 7.8 A, V_DD = 50 V, R_G = 25 Ω, starting T_J = 25°C.
3. I_SD ≤ 9.5 A, di/dt ≤ 300 A/μs, V_DD ≤ BV_DSS, starting T_J = 25°C.
4. Essentially independent of operating temperature.
Typ
--
0.28
--
--
--
--
--
0.29
5.6
395
97
40.5
11
92
70
72
20
3.1
10.5
--
--
--
158
0.97
Max Unit
--
--
10
100
100
-100
V
V/°C
μA
μA
nA
nA
4.0
V
0.36
Ω
--
S
510
pF
125
pF
53
pF
30
ns
190
ns
150
ns
160
ns
26
nC
--
nC
--
nC
7.8
A
31.2
A
1.5
V
--
ns
--
μC
©2003 Fairchild Semiconductor Corporation
2
FQD10N20C / FQU10N20C Rev. C2
www.fairchildsemi.com