FQT2P25 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 250V P-Channel MOSFET

Electrical Characteristics
Symbol
Parameter
T_C = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
∆B_VDSS/
∆T_J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V_GS = 0 V, I_D = -250 µA
-250 --
I_D = -250 µA, Referenced to 25°C -- -0.2
I_DSS
Zero Gate Voltage Drain Current
V_DS = -250 V, V_GS = 0 V
V_DS = -200 V, T_C = 125°C
--
--
--
--
I_GSSF
I_GSSR
Gate-Body Leakage Current, Forward V_GS = -30 V, V_DS = 0 V
Gate-Body Leakage Current, Reverse V_GS = 30 V, V_DS = 0 V
--
--
--
--
On Characteristics
V_GS(th)
R_DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
g_FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
-3.0 --
V_GS = -10 V, I_D = -0.275 A
-- 3.15
V_DS = -40 V, I_D = -0.275 A _{(Note 4)}
--
0.6
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = -25 V, V_GS = 0 V,
f = 1.0 MHz
-- 190
--
40
-- 6.5
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = -125 V, I_D = -2.3 A,
R_G = 25 Ω
-- 8.5
--
40
--
12
(Note 4, 5)
--
25
V_DS = -200 V, I_D = -2.3 A,
-- 6.5
V_GS = -10 V
-- 1.8
(Note 4, 5) --
3.0
--
--
-1
-10
-100
100
-5.0
4.0
--
250
55
8.5
25
90
35
60
8.5
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
--
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
--
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = -0.55 A
--
trr
Reverse Recovery Time
V_GS = 0 V, I_S = -2.3 A,
--
Qrr
Reverse Recovery Charge
dI_F / dt = 100 A/µs
(Note 4)
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 635mH, I_AS = -0.55A, V_DD = -50V, R_G = 25 Ω, Starting T_J = 25°C
3. I_SD ≤ -2.3A, di/dt ≤ 300A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
-- -0.55
A
--
-2.2
A
--
-5.0
V
110
--
ns
0.4
--
µC
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001