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FQS4410 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, Power MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ
Max
Unit
s
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 30 V, VGS = 0 V
VDS = 24 V, TC = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30
--
--
V
-- 0.03
--
V/°C
--
--
1
µA
--
--
10
µA
--
--
100
nA
--
--
-100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0
--
2.5
V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 5 A
--
(Note 4) --
--
--
0.0135
0.02
Ω
VDS = 10 V, ID = 5 A
--
16
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
980
1280 pF
--
590
770
pF
--
145
190
pF
Switching Characteristics
td(on)
tr
td(off)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 15 V, ID = 5 A,
--
30
70
ns
RG = 50 Ω
--
165
340
ns
(Note 4, 5) --
65
140
ns
--
110
230
ns
VDS = 24 V, ID = 10 A,
--
21
VGS = 5 V
(Note 4, 5) --
4.2
--
12
28
nC
--
nC
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
--
--
trr
Reverse Recovery Time
VGS = 0 V, IS = 24 A,
(Note 4) --
45
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
--
45
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 10A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2.3
A
50
A
1.1
V
--
ns
--
nC
©2000 Fairchild Semiconductor International
Rev. A, May 2000
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