FQPF6N80CT Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω

Package Marking and Ordering Information
Part Number
FQP6N80C
FQPF6N80C
FQPF6N80CT
Top Mark
FQP6N80C
FQPF6N80C
FQPF6N80CT
Package
TO-220
TO-220F
TO-220F
Packing Method
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
Electrical Characteristics
Symbol
Parameter
T_C = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 µA
800 --
∆BV_{DSS Breakdown Voltage Temperature}
/ ∆T_J Coefficient
I_D = 250 µA, Referenced to 25°C -- 0.97
I_DSS
Zero Gate Voltage Drain Current
V_DS = 800 V, V_GS = 0 V
V_DS = 640 V, T_C = 125°C
--
--
--
--
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 30 V, V_DS = 0 V
--
--
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -30 V, V_DS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V_GS(th) Gate Threshold Voltage
R_DS(on)
Static Drain-Source
On-Resistance
g_FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 2.75 A
V_DS = 50 V, I_D = 2.75 A
3.0 --
5.0
V
-- 2.1 2.5
Ω
-- 5.4
--
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
-- 1010 1310 pF
--
90
115
pF
--
8
11
pF
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 400 V, I_D = 5.5 A,
R_G = 25 Ω
--
26
60
ns
--
65 140
ns
--
47 105
ns
(Note 4)
--
44
90
ns
V_DS = 640 V, I_D = 5.5 A,
--
21
30
nC
V_GS = 10 V
--
6
--
nC
(Note 4) _--
9
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 5.5 A
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 5.5 A,
dI_F / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 42 mH, I_AS = 5.5 A, V_DD = 50 V, R_G = 25 Ω, starting T_J = 25°C.
3. I_SD ≤ 5.5 A, di/dt ≤ 200 A/µs, V_DD ≤ BV_DSS, starting T_J = 25°C.
4. Essentially independent of operating temperature.
--
--
5.5
A
--
--
22
A
--
--
1.4
V
-- 615
--
ns
-- 5.4
--
µC
©2003 Fairchild Semiconductor Corporation
2
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com