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FQPF5N60 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
600 --
ID = 250 µA, Referenced to 25°C -- 0.6
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
VGS = 10 V, ID = 1.4 A
-- 1.57
VDS = 50 V, ID = 1.4 A (Note 4) --
3.5
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 560
-- 80
--
9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 5.0 A,
RG = 25 Ω
-- 13
-- 45
-- 35
(Note 4, 5)
--
40
VDS = 480 V, ID = 5.0 A,
-- 16
VGS = 10 V
-- 3.5
(Note 4, 5)
--
7.8
--
--
10
100
100
-100
5.0
2.0
--
730
100
12
35
100
80
90
20
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
11.2
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 5.0 A,
-- 270
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
1.9
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 70mH, IAS = 2.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. Only for back side in Viso = 4.0kV and t = 0.3s
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
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