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FQPF1N60 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET
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Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C --
0.4
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
VGS = 10 V, ID = 0.45 A
-- 9.3
VDS = 50 V, ID = 0.45 A (Note 4) --
0.8
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 120
--
20
--
3
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 1.2 A,
RG = 25 Ω
--
5
--
25
--
7
(Note 4, 5)
--
25
VDS = 480 V, ID = 1.2 A,
--
5
VGS = 10 V
--
1
(Note 4, 5) --
2.6
--
--
10
100
100
-100
5.0
11.5
--
150
25
4
20
60
25
60
6
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
0.9
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
3.6
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.9 A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.2 A,
-- 160
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.3
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 113mH, IAS = 0.9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  1.2A, di/dt  200A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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