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FQP7N20L Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 200V LOGIC N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.17
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
VGS = 10 V, ID = 3.25 A
VGS = 5 V, ID = 3.25 A (Note 4)
--
0.59
0.62
VDS = 30 V, ID = 3.25 A
-- 6.3
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 390
-- 55
-- 8.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 6.5 A,
-- 12
RG = 25 Ω
-- 125
(Note 4, 5) --
20
-- 65
VDS = 160 V, ID = 6.5 A,
-- 6.8
VGS = 5 V
(Note 4, 5) --
1.6
-- 3.4
--
--
1
10
100
-100
2.0
0.75
0.78
--
500
70
11
35
260
50
140
9.0
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
6.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
26
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.5 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 6.5 A,
(Note 4)
--
110
--
ns
dIF / dt = 100 A/µs
-- 0.44 --
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.6mH, IAS = 6.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 6.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
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