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FQP20N06L Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 60V LOGIC N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60
--
--
V
ID = 250 µA, Referenced to 25°C -- 0.06
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
--
--
1
µA
--
--
10
µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
100
nA
--
-- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.5
V
VGS = 10 V, ID = 10.5 A
VGS = 5 V, ID =10.5 A
-- 0.042 0.055
-- 0.055 0.07
Ω
VDS = 25 V, ID = 10.5 A (Note 4)
--
11
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 480 630
pF
-- 175 230
pF
-- 35
45
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 10.5 A,
RG = 25 Ω
-- 10
30
ns
-- 165 340
ns
-- 35
80
ns
(Note 4, 5)
--
70 150
ns
VDS = 48 V, ID = 21 A,
-- 9.5
13
nC
VGS = 5 V
-- 2.5
--
nC
(Note 4, 5)
--
5.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
21
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
84
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 21 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 21 A,
-- 54
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
75
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 450µH, IAS = 21A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 21A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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