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FQP18N50V2 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
500 --
ID = 250 µA, Referenced to 25°C --
0.5
--
V
-- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
1
µA
--
--
10
µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
100 nA
--
-- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
V
VGS = 10 V, ID = 9 A
-- 0.225 0.265 Ω
VDS = 40 V, ID = 9 A
(Note 4) --
16
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 400 V, VGS = 0 V,
f = 1.0 MHz
VDS = 0V to 400 V, VGS = 0 V
-- 2530 3290 pF
-- 300 390 pF
--
11 14.3 pF
--
76
--
pF
-- 150
--
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 18 A,
RG = 25 Ω
--
40
90
ns
-- 150 310 ns
--
95 200
ns
(Note 4, 5)
--
110 230
ns
VDS = 400 V, ID = 18 A,
--
42
55
nC
VGS = 10 V
--
12
--
nC
(Note 4, 5) --
14
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
18
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
72
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 18 A,
-- 420
--
ns
dIF / dt = 100 A/µs
(Note 4) --
5.4
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.83mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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