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FQP17P10 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 100V P-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = -250 µA
-100 --
ID = -250 µA, Referenced to 25°C -- -0.1
IDSS
Zero Gate Voltage Drain Current
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 150°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
V
VGS = -10 V, ID = -8.25 A
-- 0.14 0.19
Ω
VDS = -40 V, ID = -8.25 A (Note 4)
--
9.9
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 850 1100 pF
-- 310 400 pF
-- 100 130 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -50 V, ID = -16.5 A,
RG = 25 Ω
--
17
45
ns
--
200 410
ns
--
45 100
ns
(Note 4, 5)
--
100 210
ns
VDS = -80 V, ID = -16.5 A,
--
30
39
nC
VGS = -10 V
-- 4.8
--
nC
(Note 4, 5)
--
17
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- -16.5 A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-66
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -16.5 A
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -16.5 A,
-- 120
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.52
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.2mH, IAS = -16.5A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -16.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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