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FQP17N08L Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 80V LOGIC N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
80
--
--
V
ID = 250 µA, Referenced to 25°C -- 0.08
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
VDS = 64 V, TC = 150°C
--
--
1
µA
--
--
10
µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
100
nA
--
-- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.0
V
VGS = 10 V, ID = 8.25 A
VGS = 5 V, ID = 8.25 A
--
0.076 0.100
0.090 0.115
Ω
VDS = 25 V, ID = 8.25 A (Note 4) -- 12.4
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 400 520
pF
-- 120 155
pF
-- 29
37
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 40 V, ID = 16.5 A,
RG = 25 Ω
--
7
25
ns
-- 290 590
ns
-- 20
50
ns
(Note 4, 5)
--
75 160
ns
VDS = 64 V, ID = 16.5 A,
-- 8.8 11.5 nC
VGS = 5 V
-- 2.0
--
nC
(Note 4, 5)
--
5.4
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- 16.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
66
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 16.5 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 16.5 A,
-- 55
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
85
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.5mH, IAS = 16.5A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 16.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
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