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FQP140N03L Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 30V LOGIC N-Channel MOSFET
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Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Unit
s
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 30 V, VGS = 0 V
VDS = 24 V, TC = 150°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30
--
--
V
--
0.03
--
V/°C
--
--
1
µA
--
--
10
µA
--
--
100 nA
--
--
-100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0
--
2.5
V
VGS = 10 V, ID = 70 A
VGS = 5 V, ID =70 A
--
--
0.0038 0.0045
0.005 0.006
Ω
VDS = 15 V, ID = 70 A (Note 4)
--
85
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 3400 4420 pF
-- 2090 2720 pF
--
580
755 pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 15 V, ID = 70 A,
--
RG = 25 Ω
--
--
(Note 4, 5)
--
VDS = 24 V, ID = 140 A,
--
VGS = 5 V
--
(Note 4, 5)
--
60
130
ns
770 1500 ns
25
60
ns
250
510
ns
73
95
nC
29.5
--
nC
38.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
140
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
490
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 140 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 140 A,
--
70
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
105
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 36µH, IAS = 140A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  140A, di/dt  300A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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