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FQP13N50 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
500 --
ID = 250 µA, Referenced to 25°C -- 0.48
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
V
VGS = 10 V, ID = 6.25 A
-- 0.33 0.43
Ω
VDS = 50 V, ID = 6.25 A (Note 4) --
10
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1800 2300 pF
-- 245 320
pF
-- 25
35
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 13.4 A,
RG = 25 Ω
-- 40
90
ns
-- 140 290
ns
-- 100 210
ns
(Note 4, 5) --
85 180
ns
VDS = 400 V, ID = 13.4 A,
-- 45
60
nC
VGS = 10 V
--
11
--
nC
(Note 4, 5) --
22
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- 12.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
50
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.5 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 13.4 A,
-- 290
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
2.6
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.3mH, IAS = 12.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 13.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
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