English
Language : 

FQP13N06 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET
◁
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
60
--
-- 0.06
--
--
--
--
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
RDS(on) Static Drain-Source On-Resistance
VGS = 10 V, ID = 6.5 A
-- 0.105 0.135
Ω
gFS
Forward Transconductance
VDS = 25 V, ID = 6.5 A (Note 4) --
5.1
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 240 310
pF
--
90
120
pF
-- 15
20
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
tf
Qg
Qgs
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 6.5 A,
RG = 25 Ω
--
5
20
ns
--
25
60
ns
--
8
25
ns
(Note 4, 5) --
15
40
ns
VDS = 48 V, ID = 13 A,
-- 5.8
7.5
nC
VGS = 10 V
-- 2.0
--
nC
(Note 4, 5) --
2.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
13
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 13 A
--
--
52
A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 13 A,
--
39
--
ns
dIF / dt = 100 A/µs
(Note 4) --
40
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 590µH, IAS = 13A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 13A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
 ▷