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FQP11N40C_08 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET
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Package Marking and Ordering Information
Device Marking
FQP11N40C
FQPF11N40C
Device
FQP11N40C
FQPF11N40C
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
400
∆BVDSS/ Breakdown Voltage Temperature
∆TJ
Coefficient
ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
--
VDS = 320 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0
VGS = 10 V, ID = 5.25 A
--
VDS = 40 V, ID = 5.25 A
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 200 V, ID = 10.5 A,
--
RG = 25 Ω
--
--
(Note 4, 5)
--
VDS = 320 V, ID = 10.5 A,
--
VGS = 10 V
--
(Note 4, 5)
--
--
--
V
0.54
--
V/°C
--
1
µA
--
10
µA
--
100
nA
--
-100
nA
--
4.0
V
0.43 0.53
Ω
7.1
--
S
840 1090
pF
250
325
pF
85
110
pF
14
40
ns
89
190
ns
81
170
ns
81
170
ns
28
35
nC
4
--
nC
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 10.5 A,
--
dIF / dt = 100 A/µs
(Note 4)
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
--
10.5
A
--
42
A
--
1.4
V
290
--
ns
2.4
--
µC
2
FQP11N40C/FQPF11N40C Rev. C1
www.fairchildsemi.com
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