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FQD9N25TM Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET | |||
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1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C,L=4.8mH,IAS =7.4A,RG=25:,VDD=50V during the inductor charging time and 0V during the time in avalanche
3. ISD È 9.4A, di/dt È 300A/μs, VDD È BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width È 300μs, Duty cycle È 2%
5. Essentially independent of operating temperature
©2011 Fairchild Semiconductor Corporation
FQD9N25TM_F085 Rev.C
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