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FQD9N25TM Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET
            


   
     
 
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1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C,L=4.8mH,IAS =7.4A,RG=25:,VDD=50V during the inductor charging time and 0V during the time in avalanche
3. ISD ȟ 9.4A, di/dt ȟ 300A/μs, VDD ȟ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ȟ 300μs, Duty cycle ȟ 2%
5. Essentially independent of operating temperature
©2011 Fairchild Semiconductor Corporation
FQD9N25TM_F085 Rev.C