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FQA11N90_06 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 900V N-Channel MOSFET
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Package Marking and Ordering Information
Device Marking
FQA11N90
FQA11N90
Device
FQA11N90
FQA11N90_F109
Package
TO-3P
TO-3PN
Reel Size
--
--
Tape Width
--
--
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
900
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
--
VDS = 720 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
3.0
VGS = 10 V, ID = 5.7 A
--
VDS = 50 V, ID = 5.7 A (Note 4)
--
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 450 V, ID = 11.4A,
--
RG = 25 Ω
--
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
--
(Note 4, 5)
--
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 720 V, ID = 11.4A,
--
VGS = 10 V
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =11.4A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 11.4 A,
dIF / dt = 100 A/µs
--
(Note 4)
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 15mH, IAS = 11.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD † 11.4A, di/dt † 200A/µs, VDD † BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typ
--
1.0
--
--
--
--
--
0.75
12
2700
260
30
65
135
165
90
72
16
35
--
--
--
850
11.2
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0
V
0.96
Ω
--
S
3500 pF
340 pF
40
pF
140
ns
280
ns
340
ns
190
ns
94
nC
--
nC
--
nC
11.4
A
45.6
A
1.4
V
--
ns
--
µC
FQA11N90 Rev. A1
2
www.fairchildsemi.com
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