FOD817 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
ELECTRICAL CHARACTERISTICS (T_A = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage
Reverse Leakage Current
Terminal Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
*Typical values at T_A = 25°C.
(I_F = 20 mA)
(V_R = 4.0 V)
(V = 0, f = 1 kHz)
(I_C = 0.1 mA, I_F = 0)
(I_E = 10 µA, I_F = 0)
(V_CE = 20 V, I_F = 0)
V_F
—
1.2
1.4
V
I_R
—
—
10
µA
C_t
–
30
250
pF
BV_CEO
70
—
—
V
BV_ECO
6
–
–
V
I_CEO
—
–
100
nA
TRANSFER CHARACTERISTICS (T_A = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol Device Min Typ* Max Unit
FOD817 50
— 600 %
FOD817A 80
— 160 %
Current Transfer Ratio
(I_F = 5 mA, V_CE = 5 V) (note 1)
CTR FOD817B 130 — 260 %
FOD817C 200 — 400 %
FOD817D 300 — 600 %
Collector-Emitter
Saturation Voltage
(I_F = 20 mA, I_C = 1 mA)
V_{CE (SAT)}
— 0.1 0.2 V
AC Characteristic
Rise Time
Fall Time
(I_C = 2 mA, V_CE = 2 V, R_L = 100Ω) (note 2)
t_r
(I_C = 2 mA, V_CE = 2 V, R_L = 100Ω) (note 2)
t_f
—
4
18 µs
—
3
18 µs
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Isolation Capacitance
*Typical values at T_A = 25°C.
f = 60Hz, t = 1 min
(V_I-O = 500 VDC)
(V_I-O = 0, f = 1 MHz)
V_ISO
R_ISO
C_ISO
NOTES
1. Current Transfer Ratio (CTR) = I_C/I_F x 100%.
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Min
5000
5 x 10¹⁰
Typ*
10¹¹
0.6
Max
Units
Vac(rms)
Ω
1.0
pf
© 2004 Fairchild Semiconductor Corporation
Page 2 of 9
8/19/04