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FMMT549 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
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PNP Low Saturation Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 30 V
VCB = 30 V, Ta=100°C
VEB = 4V
30
V
35
V
5
V
100 nA
10 uA
100 nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 50 mA, VCE = 2V
IC = 500 mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 200 mA
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
70
-
100 300
80
40
500 mV
750 mV
1.25 V
1
V
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
fT
Transition Frequency
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 10 V, IE = 0, f = 1MHz
IC = 100 mA,VCE = 5 V, f=100MHz 100
25
pF
MHz
© 1998 Fairchild Semiconducto Corporation
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fmmt549.lwpPrPB 7/10/98 revB
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