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FMG1G100US60L Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – Molding Type Module
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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
VGE = 0V, IC=100mA
IC = 100A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 300 V, IC = 100A,
RG = 2.4Ω, VGE = 15V
Inductive Load, TC = 25°C
VCC = 300 V, IC = 100A,
RG = 2.4Ω, VGE = 15V
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 100A,
VGE = 15V
Min. Typ. Max. Units
600
--
--
V
--
0.6
--
V/°C
--
--
250 uA
--
-- ± 100 nA
5.0
6.0
8.5
V
--
2.2
2.8
V
-- 10840 --
pF
--
963
--
pF
--
228
--
pF
--
25
--
ns
--
50
--
ns
--
80
--
ns
--
110 200
ns
--
1.6
--
mJ
--
2.4
--
mJ
--
4.0
--
mJ
--
25
--
ns
--
60
--
ns
--
80
--
ns
--
240
--
ns
--
1.7
--
mJ
--
4.3
--
mJ
--
6.0
--
mJ
10
--
--
us
--
425 500 nC
--
80
--
nC
--
200
--
nC
©2002 Fairchild Semiconductor Corporation
FMG1G100US60L Rev. A
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