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FMC7G10US60 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – Compact & Complex Module
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Electrical Characteristics of the IGBT @ Inverter & Brake TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 10mA, VCE = VGE
IC = 10A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 10A,
VGE = 15V
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
5.0
6.0
8.5
V
--
2.2 2.8
V
--
660
--
pF
--
115
--
pF
--
25
--
pF
--
15
--
ns
--
30
--
ns
--
36
50
ns
--
158 200
ns
--
0.14
--
mJ
--
0.22
--
mJ
--
0.36 0.5
mJ
--
16
--
ns
--
33
--
ns
--
42
60
ns
--
242 350
ns
--
0.16
--
mJ
--
0.45
--
mJ
--
0.61 0.86 mJ
10
--
--
us
--
30
45
nC
--
5
10
nC
--
8
16
nC
©2001 Fairchild Semiconductor Corporation
FMC7G10US60 Rev. A4
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