FMBS549_06 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – PNP Low Saturation Transistor

Electrical Characteristics* T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BV_CEO
BV_CBO
BV_EBO
I_CBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
On Characteristics *
I_C = -10mA, I_B = 0
I_C = -100µA, I_E = 0
I_E = -100µA, I_C = 0
V_CB = -30V, I_E = 0
V_CB = -30V, I_E = 0, T_a = 100°C
V_EB= -4.0V, I_C=0
h_FE
DC Current Gain
V_CE (sat)
Collector-Emitter Saturation Voltage
V_BE (sat)
Base-Emitter Saturation Voltage
V_BE (on)
Base-Emitter On Voltage
Small Signal Characterics
V_CE = -2.0V, I_C = -50mA
V_CE = -2.0V, I_C = -500mA
V_CE = -2.0V, I_C = -1A
V_CE = -2.0V, I_C = -2A
V_CE = -0.8V, I_C = -500mA
I_C = -250mA, I_B = -25mA
I_C = -500mA, I_B = -50mA
I_C = -1A, I_B = -100mA
I_C = -2A, I_B = -200mA
I_C = -1A, I_B = -100mA
I_C = -1A, V_CE = -2.0V
f_T
Current Gain Bandwidth Product
I_C = -100mA, V_CE = -5V,
f = 100MHz
C_ob
Output Capacitance
V_CB = -10V, I_E = 0, f = 1MHz
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Min.
-30
-35
-5.0
70
100
80
40
100
100
Max.
-100
-10
-100
Units
V
V
V
nA
µA
nA
300
-200
-350
-500
-750
-1.25
-1.0
25
mV
mV
mV
mV
V
V
MHz
pF
FMBS549 Rev. B
2
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