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FGA90N33AT Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 330V, 90A PDP Trench IGBT
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Package Marking and Ordering Information
Device Marking
Device
FGA90N33AT
FGA90N33ATTU
Package
TO-3P
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250µA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 20A, VGE = 15V
IC = 45A, VGE = 15V,
IC = 90A, VGE = 15V,
TC = 25oC
IC = 90A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 20A,
VGE = 15V
330
-
-
V
-
-
250
µA
-
-
±400
nA
2.5
4.0
5.5
V
-
1.1
1.4
V
-
1.3
-
V
-
1.6
-
V
-
1.7
-
V
-
2200
-
pF
-
135
-
pF
-
100
-
pF
-
23
-
ns
-
40
-
ns
-
100
-
ns
-
180
240
ns
-
20
-
ns
-
40
-
ns
-
110
-
ns
-
250
300
ns
-
95
-
nC
-
12
-
nC
-
40
-
nC
FGA90N33AT Rev. A
2
www.fairchildsemi.com
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