FFPF60SA60DS Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Stealth Rectifier

Electrical Characteristics (per leg) T_C=25 °C unless otherwise noted
Symbol
Parameter
Min. Typ.
V_{FM *}
Maximum Instantaneous Forward Voltage
I_F = 8A
I_F = 8A
T_C = 25 °C
-
2.0
T_C = 125 °C
-
1.6
I_{RM *}
Maximum Instantaneous Reverse Current
@ rated V_R
T_C = 25 °C
-
-
T_C = 125 °C
-
-
t_rr
Maximum Reverse Recovery Time
(I_F =1A, di/dt = 100A/µs, V_R = 30V)
-
-
t_rr
Maximum Reverse Recovery Time
(I_F =8A, di/dt = 100A/µs, V_R = 30V)
-
-
t_rr
Reverse Recovery Time
I_rr
Reverse Recovery Current
Q_rr
Reverse Recovery Charge
(I_F =8A, di/dt = 200A/µs, V_R = 390V)
-
39
-
2
-
39
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Max.
2.4
2.0
100
1000
25
30
-
-
-
Typical Characteristics
Units
V
µA
ns
ns
ns
A
nC
10
T = 150^oC
C
T = 125oC
C
T = 25oC
C
T = 100oC
C
1
0.1
0.5
1.0
1.5
2.0
2.5
Forward Voltage , V [V]
F
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
200
Typical Capacitance
at 0V = 169.3 pF
150
100
50
0.1
1
10
100
Reverse Voltage , V [V]
R
Figure 3. Typical Junction Capacitance
©2004 Fairchild Semiconductor Corporation
100
T = 150oC
C
T = 125oC
C
10
T = 100^oC
C
1
0.1
T = 25^oC
C
0.001
0 50 100 150 200 250 300 350 400 450 500 550 600
Reverse Voltage , V [V]
R
Figure 2. Typical Reverse Current
vs. Reverse Voltage
44
42
40
38
36
34
32
30
28
26
100
I = 8A
F
Tc = 25^oC
200
300
di/dt [A/µs]
400 500 600
Figure 4. Typical Reverse Recovery Time
vs. di/dt
Rev. A, October 2004