FFPF20UP20DNTU Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 20 A, 200 V, Ultrafast Dual Diode

Electrical Characteristics (per diode) T_a = 25°C unless otherwise noted
Symbol
Parameter
V_{F *}
I_{R *}
t_rr
t_a
t_b
Q_rr
W_AVL
I_F = 10 A
I_F = 10 A
V_R = 200 V
V_R = 200 V
I_F = 1 A, di_F/dt = 100 A/µs, V_R = 30 V
I_F = 10 A, di_F/dt = 200 A/µs, V_R = 130 V
I_F =10 A, di_F/dt = 200 A/µs, V_R = 130 V
Avalanche Energy (L = 20 mH)
T_C = 25 °C
T_C = 150 °C
T_C = 25 °C
T_C = 150 °C
T_C = 25 °C
T_C = 25 °C
T_C = 25 °C
T_C = 25 °C
T_C = 25 °C
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
Min.
-
-
-
-
-
-
-
-
-
10
Typ.
-
-
-
-
-
-
15
12
36
-
Max.
1.15
1.0
100
500
35
45
-
-
-
-
Unit
V
V
µA
µA
ns
ns
ns
ns
nC
mJ
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2005 Fairchild Semiconductor Corporation
2
FFPF20UP20DN Rev. C1
www.fairchildsemi.com