FFPF10UP30STTU Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 10 A, 300 V, Ultrafast Diode

Electrical Characteristics (per diode) T_a = 25°C unless otherwise noted
Symbol
Parameter
V_{F *}
I_{R *}
t_rr
I_F = 10 A
I_F = 10 A
V_R = 300 V
V_R = 300 V
I_F =1 A, di/dt = 100 A/μs, V_CC = 30 V
I_F =10 A, di/dt = 200 A/μs, V_CC = 195 V
t_a
t_b
Q_rr
W_AVL
I_F =10 A, di/dt = 200 A/μs, V_CC = 195 V
Avalanche Energy (L = 20 mH)
*Pulse Test: Pulse Width=300 μs, Duty Cycle=2%
T_C = 25 °C
T_C = 150 °C
T_C = 25 °C
T_C = 150 °C
T_C = 25 °C
T_C = 25 °C
T_C = 25 °C
T_C = 25 °C
T_C = 25 °C
Min.
-
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
-
-
11
13
20
-
Max.
1.4
1.2
100
500
35
45
-
-
-
-
Unit
V
V
μA
μA
ns
ns
ns
ns
nC
mJ
©2005 Fairchild Semiconductor Corporation
2
FFPF10UP30ST Rev. A
www.fairchildsemi.com