FFPF10UP20STU Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 10 A, 200 V, Ultrafast Diode

Electrical Characteristics T_C = 25^oC unless otherwise noted
Symbol
V_F1
Forward Voltage
Reverse Current
I_R1
Parameter
I_F = 10 A
I_F = 10 A
@ rated V_R
t_rr
I_rr
Q_rr
W_AVL
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
(I_F = 6 A, di_F/dt = 200 A/μs, V_R = 130 V)
Avalanche Energy ( L = 40 mH)
Notes:
1: Pulse: Test Pulse width = 300s, Duty Cycle = 2%
T_C
T_C
=
=
25^oC
125^oC
T_C
T_C
=
=
25^oC
100^oC
T_C = 25^oC
Min.
-
-
-
-
-
-
-
5
Typ.
-
-
-
-
32
1.65
24.4
-
Max.
Unit
1.15
V
1.10
100
A
500
-
ns
-
A
-
nC
-
mJ
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2004 Fairchild Semiconductor Corporation
FFPF10UP20S Rev. C1
2
www.fairchildsemi.com