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FFP08H60S Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Hyperfast Recovery Power Rectifier
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Electrical Characteristics (per diode) Ta = 25°C unless otherwise noted
Symbol
Parameter
VFM *
IRM *
trr
ta
tb
Qrr
WAVL
IF = 8A
IF = 8A
VR = 600V
VR = 600V
IF =1A, di/dt = 100A/µs, VCC = 30V
IF =8A, di/dt = 100A/µs, VCC = 390V
IF =8A, di/dt = 100A/µs, VCC = 390V
Avalanche Energy (L = 40mH)
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
Test Circuit and Waveforms
Min.
-
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
-
-
15
16
18.6
-
Max.
2.1
1.7
100
500
35
45
-
-
-
-
Units
V
V
µA
µA
ns
ns
ns
ns
nC
mJ
FFP08H60S Rev. A
2
www.fairchildsemi.com
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