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FDW2501NZ_02 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET | |||
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
âBVDSS
âTJ
IDSS
DrainâSource Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
20
ID = 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
IGSSF
GateâBody Leakage, Forward
VGS = 12 V, VDS = 0 V
IGSSR
GateâBody Leakage, Reverse
VGS = â12 V, VDS = 0 V
V
14
mV/°C
1
µA
10
µA
â10 µA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
âVGS(th)
âTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static DrainâSource
OnâResistance
ID(on)
OnâState Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
0.6 1.0 1.5
V
ID = 250 µA, Referenced to 25°C
â3
mV/°C
VGS = 4.5 V, ID = 5.5 A
VGS = 2.5 V, ID = 5 A
VGS = 4.5 V, ID = 5.5 A, TJ=125°C
14
18
mâ¦
19 25
19 29
VGS = 4.5 V,
VDS = 5 V
30
A
VDS = 5 V,
ID = 5.5 A
30
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
1286
pF
305
pF
161
pF
Switching Characteristics
td(on)
TurnâOn Delay Time
tr
TurnâOn Rise Time
td(off)
TurnâOff Delay Time
tf
TurnâOff Fall Time
Qg
Total Gate Charge
Qgs
GateâSource Charge
Qgd
GateâDrain Charge
(Note 2)
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 â¦
VDS = 10 V,
VGS = 4.5 V
ID = 5.5 A,
10 20
ns
14 25
ns
25 40
ns
8
16
ns
12 17
nC
2.6
nC
3
nC
DrainâSource Diode Characteristics and Maximum Ratings
IS
Maximum Continuous DrainâSource Diode Forward Current
VSD
DrainâSource Diode Forward
Voltage
VGS = 0 V, IS = 1.0 A (Note 2)
1.0
A
0.7 1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 100°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 125°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDW2501NZ Rev E1 (W)
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