FDU6682 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 17 A
IAR
Drain-Source Avalanche Current
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage V_GS = 0 V,
ID = 250 µA
30
Breakdown Voltage Temperature I_D = 250 µA, Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = 250 µA
1
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
ID = 17 A
VGS = 4.5 V, ID = 15 A
VGS = 10 V, ID = 17 A, TJ=125°C
VGS = 10 V,
VDS = 5 V
50
VDS = 5 V,
ID = 17 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15V,
VGS = 5 V
ID = 17 A,
20
1.9
–7
5.2
6.4
8.0
65
2400
577
258
1.4
14
12
38
18
24
6.5
8.1
Max
240
17
1
±100
3
6.2
8
11.9
20
37
64
32
31
Units
mJ
A
V
mV/°C
µA
nA
V
mV/°C
mΩ
A
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
FDD6682/FDU6682 Rev H(W)