FDS8978 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench MOSFET

Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
B_VDSS
Drain to Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate to Source Leakage Current
I_D = 250µA, V_GS = 0V
30
V_DS = 24V
V_GS = 0V
-
T_A = 150^oC -
V_GS = ±20V
-
On Characteristics
V_GS(TH)
Gate to Source Threshold Voltage
V_GS = V_DS, I_D = 250µA
1.2
I_D = 7.5A, V_GS = 10V
-
r_DS(ON)
Drain to Source On Resistance
I_D = 6.9A, V_GS = 4.5V
I_D = 7.5A, V_GS = 10V,
T_A = 150^oC
-
-
Dynamic Characteristics
C_ISS
C_OSS
C_RSS
R_G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q_g
Total Gate Charge
Q_gs
Q_gs2
Q_gd
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
-
V_DS = 15V, V_GS = 0V,
f = 1MHz
-
-
f = 1MHz
V_GS =10V
V_GS = 5V
-
V_DD = 15V
I_D = 7.5A
-
-
-
Switching Characteristics (V_GS = 10V)
t_ON
t_d(ON)
t_r
t_d(OFF)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
-
-
V_DD = 15V, I_D = 7.5A
-
V_GS = 10V, R_GS = 16Ω
-
t_f
Fall Time
-
t_OFF
Turn-Off Time
-
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Voltage
t_rr
Reverse Recovery Time
Q_RR
Reverse Recovered Charge
I_SD = 7.5A
-
I_SD = 2.1A
-
I_SD = 7.5A, dI_SD/dt=100A/µs
-
I_SD = 7.5A, dI_SD/dt=100A/µs
-
Notes:
1:
2:
3:
4:
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Typ Max Units
-
-
V
-
1
µA
-
250
-
±100 nA
-
2.5
V
0.014 0.018
0.017 0.021
Ω
0.022 0.029
907
-
pF
191
-
pF
112
-
pF
1.2
4.0
Ω
17
26
nC
9
14
nC
2.3
-
nC
1.5
-
nC
3.3
-
nC
44
66
ns
7
10.5 ns
37 55.5 ns
48
72
ns
24
36
ns
72
108
ns
-
1.25
V
-
1.0
V
19
25
ns
10
13
nC
FDS8978 Rev. A
2
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