FDS8958A_08 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrenchO MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
IGSSF
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
VDS = -24 V,
VGS = 0 V
VGS = 20 V,
VDS = 0 V
VGS = -20 V, VDS = 0 V
Q1 30
Q2 -30
Q1
25
Q2
-23
V
mV/°C
Q1
1
µA
Q2
-1
All
100 nA
All
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = VGS,
VDS = VGS,
ID = 250 µA
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V,
ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V,
ID = 6 A
VGS = -10 V,
ID = -5 A
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V, ID = -4 A
VGS = 10 V,
VDS = 5 V
VGS = -10 V,
VDS = -5 V
VDS = 5 V,
ID = 7 A
VDS = -5 V,
ID =-5 A
Q1 1 1.9 3
V
Q2 -1 -1.7 -3
Q1
-4.5
mV/°C
Q2
4.5
Q1
19 28 mΩ
27 42
24 40
Q2
42 52
57 78
65 80
Q1 20
A
Q2 -20
Q1
25
S
Q2
10
Dynamic Characteristics
Ciss
Input Capacitance
Q1
Q1
575
pF
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Q2
528
Coss
Output Capacitance
Q1
145
pF
Q2
Q2
132
Crss
Reverse Transfer Capacitance ^VDS ^{= -15 V, V}GS ^{= 0 V, f = 1.0 MHz} Q1
65
pF
Q2
70
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Q1
2.1
Ω
Q2
6.0
FDS8958A Rev F3 (W)