FDS86240 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BV_DSS
ΔBV_DSS
ΔT_J
I_DSS
I_GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I_D = 250 μA, V_GS = 0 V
150
I_D = 250 μA, referenced to 25 °C
V_DS = 120 V, V_GS = 0 V
V_GS = ±20 V, V_DS = 0 V
On Characteristics
V_GS(th)
ΔV_GS(th)
ΔT_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(on)
Static Drain to Source On Resistance
g_FS
Forward Transconductance
V_GS = V_DS, I_D = 250 μA
2
I_D = 250 μA, referenced to 25 °C
V_GS = 10 V, I_D = 7.5 A
V_GS = 6 V, I_D = 6.4 A
V_GS = 10 V, I_D = 7.5 A, T_J = 125 °C
V_DS = 10 V, I_D = 7.5 A
Dynamic Characteristics
C_iss
C_oss
C_rss
R_g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_DS = 75 V, V_GS = 0 V,
f = 1 MHz
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g(TOT)
Q_g(TOT)
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V_DD = 75 V, I_D = 7.5 A,
V_GS = 10 V, R_GEN = 6 Ω
V_GS = 0 V to 10 V
V_GS = 0 V to 5 V
V_DD = 75 V,
I_D = 7.5 A
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 7.5 A
V_GS = 0 V, I_S = 2 A
(Note 2)
(Note 2)
I_F = 7.5 A, di/dt = 100 A/μs
Typ Max Units
V
105
mV/°C
1
μA
±100 nA
2.7
4
V
-11
mV/°C
17.3 19.8
19.7
26
mΩ
30.8 35.3
26
S
1930 2570 pF
198 265
pF
8.3
15
pF
0.84
Ω
14
26
ns
4.2
10
ns
24
39
ns
4.9
10
ns
28
40
nC
16
22
nC
7.6
nC
5.3
nC
0.77 1.3
V
0.70 1.2
75
120
ns
109 175
nC
NOTES:
1. R_θJA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in² pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T_J = 25 °C, L = 1 mH, I_AS = 21 A, V_DD = 135 V, V_GS = 10 V.
FDS86240 Rev.C
2
www.fairchildsemi.com