FDS7096N3 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
∆BVDSS
∆T_J
I_DSS
Drain–Source Breakdown Voltage V_GS = 0 V, I_D = 250 µA
30
Breakdown Voltage Temperature I_D = 250 µA, Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current V_DS = 24 V, V_GS = 0 V
I_GSS
Gate–Body Leakage
V_GS = ±20 V, V_DS = 0 V
V
27
mV/°C
10
µA
±100 nA
On Characteristics (Note 2)
V_GS(th)
Gate Threshold Voltage
∆VGS(th)
∆T_J
R_DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
g_FS
Forward Transconductance
V_DS = V_GS,
I_D = 250 µA
1
I_D = 250 µA, Referenced to 25°C
V_GS = 10 V, I_D = 14 A
V_GS = 4.5 V, I_D = 13 A
V_GS = 10 V, I_D = 14 A,T_J = 125°C
V_DS = 10 V, I_D = 14 A
1.9
3
V
–6
mV/°C
7.5
9
mΩ
9.5 12
11 14
62
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_G
Gate Resistance
V_DS = 15 V,
f = 1.0 MHz
V _GS = 0 V,
V_GS = 15 mV, f = 1.0 MHz
1587
pF
385
pF
154
pF
1.4
Ω
Switching Characteristics (Note 2)
t_d(on)
Turn–On Delay Time
t_r
Turn–On Rise Time
t_d(off)
Turn–Off Delay Time
t_f
Turn–Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate–Source Charge
Q_gd
Gate–Drain Charge
V_DD = 15 V,
V_GS = 10 V,
I_D = 1 A,
R_GEN = 6 Ω
V_DS = 15 V,
V_GS = 5.0 V
I_D = 14 A,
11
20
ns
13
23
ns
27
43
ns
15
27
ns
16
22
nC
5
nC
6
nC
Drain–Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain–Source Diode Forward Current
t_RR
Reverse Recovery Time
Q_RR
Reverse Recovery Charge
I_F = 14 A,
d_iF/d_t = 100 A/µs
(Note 2)
V_SD
Drain–Source Diode Forward
Voltage
V_GS = 0 V, I_S = 2.5 A (Note 2)
2.5
A
16
ns
26
nC
0.7 1.2
V
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) 40°C/W when
mounted on a 1in² pad
of 2 oz copper
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7096N3 Rev E2 (W)