FDS3170N7 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 100V N-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W_DSS
Drain-Source Avalanche Energy Single Pulse, V_DD = 50 V, I_D= 6.7 A
I_AR
Drain-Source Avalanche Current
360 mJ
6.7
A
Off Characteristics
BV_DSS
Drain–Source Breakdown
Voltage
∆BVDSS
∆T_J
Breakdown Voltage Temperature
Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate–Body Leakage
V_GS = 0 V,
I_D = 250 µA
I_D = 250 µA, Referenced to 25°C
V_DS = 80 V, V_GS = 0 V
V_GS = ± 20 V, V_DS = 0 V
100
V
104
mV/°C
1
µA
±100 nA
On Characteristics (Note 2)
V_GS(th)
Gate Threshold Voltage
∆VGS(th)
∆T_J
R_DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
g_FS
Forward Transconductance
V_DS = V_GS,
I_D = 250 µA
I_D = 250 µA, Referenced to 25°C
2
2.5
4
V
–6.9
mV/°C
V_GS = 10 V,
V_GS = 6.0V,
V_GS = 10 V,
V_DS = 10 V,
I_D = 6.7 A
I_D = 6.4 A
I_D = 6.7 A,T_J = 125°C
I_D = 6.7 A
21
26
mΩ
22
28
40
52
37
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_G
Gate Resistance
V_DS = 50 V,
f = 1.0 MHz
V _GS = 0 V,
V_GS = 15 mV, f = 1.0 MHz
2714
pF
171
pF
82
pF
1.1
Ω
Switching Characteristics (Note 2)
t_d(on)
Turn–On Delay Time
t_r
Turn–On Rise Time
t_d(off)
Turn–Off Delay Time
t_f
Turn–Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate–Source Charge
Q_gd
Gate–Drain Charge
V_DD = 50 V,
V_GS = 10 V,
I_D = 1 A,
R_GEN = 6 Ω
V_DS = 50 V,
V_GS = 10 V
I_D = 6.7 A,
14
26
ns
10
18
ns
49
80
ns
24
40
ns
55
77
nC
12
nC
14
nC
Drain–Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain–Source Diode Forward Current
2.5
A
V_SD
Drain–Source Diode Forward
Voltage
V_GS = 0 V, I_S = 2.5 A (Note 2)
0.7 1.2
V
t_RR
Reverse Recovery Time
I_F = 6.7 A,
47
ns
Q_RR
Reverse Recovery Charge
d_iF/d_t = 100 A/µs
(Note 2)
135
nC
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%, For Repetitive Avalanche Tj must be less the 150 °C
a) 40°C/W when mounted
on a 1in² pad of 2 oz
copper
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
FDS3170N7 Rev C1(W)