FDS2670_01 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 200V N-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 100 V,
IAR
Maximum Drain-Source Avalanche
Current
ID = 3.0 A
375 mJ
3.0
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V,
ID = 250 µA
200
ID = 250 µA, Referenced to 25°C
VDS = 160 V,
VGS = 20 V,
VGS = –20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
V
214
mV/°C
1
µA
100 nA
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = 250 µA
2
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 3.0 A
VGS =10 V, ID =3.0 A, TJ =125°C
VGS = 10 V, VDS = 10 V
20
VDS = 10 V, ID = 3.0 A
4
4.5
V
–10
mV/°C
100 130 mΩ
205 275
A
15
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 100 V, V GS = 0 V,
f = 1.0 MHz
1228
pF
112
pF
17
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 100 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 100 V, ID = 3 A,
VGS = 10 V
13 23
ns
8
16
ns
30 48
ns
25 40
ns
27 43
nC
7
nC
10
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.1 A (Note 2)
2.1
A
0.7 1.2
V
FDS2670 Rev C1(W)